| PART |
Description |
Maker |
| APT10040B2VR APT10040LVR |
POWER MOS V 1000V 25A 0.400 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Advanced Power Technology, Ltd.
|
| APT10086BVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1000V 13A 0.860 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| APT1001R1BVFR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1000V 11A 1.100 Ohm
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
|
| APT10050JVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1000V 19A 0.500 Ohm
|
Advanced Power Technology
|
| APT10086BLC APT10086SLC |
POWER MOS VI 1000V 13A 0.860 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. 电源MOS VITM是一种低栅极电荷新一代高压N沟道增强型功率MOSFET
|
Advanced Power Technology Ltd.
Advanced Power Technology, Ltd.
|
| GBJ25005-BP GBJ2504-BP GBJ2510-BP GBJ2502-BP GBJ25 |
RECT BRIDGE GPP 25A 50V GBJ 25 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE
RECT BRIDGE GPP 25A 400V GBJ 25 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
RECT BRIDGE GPP 25A 1000V GBJ 25 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
RECT BRIDGE GPP 25A 200V GBJ 25 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
25 Amp Glass Passivated Bridge Rectifier 50 to 1000 Volts
|
Micro Commercial Components, Corp.
Micro Commercial Compon...
|
| APT10025PVR |
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-61 RoHS Compliant: No
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1000V 33A 0.250 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| APT10050B2VFR APT10050LVFR |
21 A, 1000 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET
POWER MOS V 1000V 21A 0.500 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technology Ltd.
|
| APT10026JLL |
POWER MOS 7 1000V 30A 0.260 Ohm
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-61 RoHS Compliant: No
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology Ltd.
|
| 100JB12L 35MB100A 35MB10A 35MB120A 100JB10L 100JB1 |
10 to 35 Amp Rectifier Bridges
V(rrm): 400V; 25A rectifier bridge
V(rrm): 1200V; 35A rectifier bridge
V(rrm): 100V; 25A rectifier bridge
V(rrm): 1000V; 25A rectifier bridge
V(rrm): 1000V; 10A rectifier bridge
V(rrm): 100V; 10A rectifier bridge
V(rrm): 400V; 10A rectifier bridge
V(rrm): 1200V; 10A rectifier bridge
V(rrm): 50V; 10A rectifier bridge
V(rrm): 200V; 10A rectifier bridge
V(rrm): 600V; 10A rectifier bridge
V(rrm): 800V; 10A rectifier bridge
V(rrm): 1200V; 25A rectifier bridge
V(rrm): 1000V; 35A rectifier bridge
V(rrm): 50V; 25A rectifier bridge
V(rrm): 600V; 25A rectifier bridge
|
IRF[International Rectifier]
|
| 25FR120 25FR120M A25FR120 A25FR120M 25FR100 25FR10 |
100V 25A Std. Recovery Diode in a DO-203AA (DO-4)package
From old datasheet system
800V 25A Std. Recovery Diode in a DO-203AA (DO-4)package
STANDARDRECOVERYDIODES
400V 25A Std. Recovery Diode in a DO-203AA (DO-4)package
600V 25A Std. Recovery Diode in a DO-203AA (DO-4)package
1000V 25A Std. Recovery Diode in a DO-203AA (DO-4)package
1200V 25A Std. Recovery Diode in a DO-203AA (DO-4)package
标准恢复二极
STANDARD RECOVERY DIODES
|
IRF[International Rectifier]
InternationalRectifier
|
| AOW25S65 AOWF25S65 |
650V 25A a MOS TM Power Transistor
|
Alpha & Omega Semiconductors
Alpha & Omega Semicondu...
|
